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2SD1172

Part Number	2SD1172
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Transistor
Published	Jun 24, 2016
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1172 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Mi...
Datasheet	2SD1172 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1172 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 4.
0V(Max.
)@ IC= 2.
5A ·Built-in Damper Diode ·Wide area of safe operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collector- Emitter Voltage(VBE= 0) 1500 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 3 A ICP Collector Current- Peak PC Collector Power Dissipation @ TC=...

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