Silicon NPN Transistor - Inchange Semiconductor
Description
INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC5086
DESCRIPTION ·Low Noise
NF = 1.
1dB TYP.
@ f = 1GHz ·High Gain
︱S21e︱2= 11dB TYP.
@ f = 1GHz
APPLICATIONS ·Designed for VHF~UHF band low noise amplifier
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
20 V
VCEO Collector-Emitter Voltage
12 V
VEBO
Emitter-Base Voltage
3V
IC Collector Current-Continuous
80 mA
IB Base Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ Junction Temperature
40 mA 0.
1 W 125 ℃
Tstg Storage Temperature Range
-55~125
℃
isc website：www.
iscsemi.
cn
1
INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC5086
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP.
MAX UNIT
ICBO Collector Cutoff Current
VCB= 10V; IE= 0
1 μA
IEBO Emitter Cutoff Current hFE DC Current Gain
︱S21e︱2 Insertion Power Gain ︱S21e︱2 Insertion Power Gain
fT Current-Gain—Bandwidth Product
VEB= 1V; IC= 0
1 μA
IC= 20mA ; VCE= 10V
80 240
IC= 20mA ; VCE= 10V; f= 500MHz
16.
5
dB
IC= 20mA ; VCE= 10V; f= 1GHz
7.
5 11
dB
IC= 20mA ; VCE= 10V
57
GHz
COB Output Capacitance
VCB= 10V; IE= 0; f= 1.
0MHz
1.
0 pF
Cre Feed-Back Capacitance NF Noise Figure
VCB= 10V; IE= 0; f= 1.
0MHz IC= 5mA ; VCE= 10V; f= 500MHz
0.
65 1.
15 pF 1 dB
NF Noise Figure
IC= 5mA ; VCE= 10V; f= 1GHz
1.
1 2 dB
hFE Classification OY
80-160
120-240
isc website：www.
iscsemi.
cn
2
INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC5086
isc website：www.
iscsemi.
cn
3
INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC5086
S-PARAMETER
VCE = 10 V, IC = 5 mA, ZO = 50Ω
f S11
(MHz)
MAG
ANG
200
0.
715
-69.
3
400
0.
542
-112.
4
600
0.
476
-137.
7
800
0.
447
-154.
4
1000
0.
435
-166.
8
1200
0.
433
-176.
6
1400
0.
435
174.
8
1600
0.
439
167.
3
1800
0.
444
160.
6
2000
0...
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