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HY3210P

Part Number	HY3210P
Manufacturer	HOOYI
Description	N-Channel Enhancement Mode MOSFET
Published	Jun 22, 2016
Datasheet	HY3210P PDF File

Features

• 100V/120A
RDS(ON) = 6.8 mΩ (typ.) @ VGS=10V

• 100% avalanche tested 
• Reliable and Rugged 
• Lead Free and Green Devices Available
(RoHS Compliant)

N-Channel Enhancement Mode MOSFET
Pin Description

DS G TO-220FB-3L

DS G TO-220FB-3M

DS G TO-263-2...

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