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MJE13005DF

Part Number	MJE13005DF
Manufacturer	KEC
Description	EPITAXIAL PLANAR NPN TRANSISTOR
Published	Jun 21, 2016
Detailed Description	SEMICONDUCTOR TECHNICAL DATA HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION. Built-in Free wheeling Diode makes effici...
Datasheet	MJE13005DF PDF File

Overview

SEMICONDUCTOR TECHNICAL DATA HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION.
Built-in Free wheeling Diode makes efficient anti saturation operation.
Suitable for half bridge light ballast Applications.
Low base drive requirement.
MJE13005DF TRIPLE DIFFUSED NPN TRANSISTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Base Current Collector Power Dissipation (Tc=25 ) Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC ICP IB RATING 800 400 10 5 10 2 UNIT V V V A A PC 30 W Tj 150 Tstg -55 150 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION ...

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