DatasheetsPDF.com

MMBTA64

KEC
Part Number MMBTA64
Manufacturer KEC
Description EPITAXIAL PLANAR PNP TRANSISTOR
Published Jun 21, 2016
Detailed Description SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. DARLINGTON TRANSISTOR. MAXIMUM RATING (Ta=25 ) CHARACTERISTI...
Datasheet PDF File MMBTA64 PDF File

MMBTA64
MMBTA64

Overview
SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION.
DARLINGTON TRANSISTOR.
MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage Collector-Emitter Voltage MMBTA63/64 VCBO MMBTA63/64 VCES -30 -30 Emitter-Base Voltage Collector Current DC Pulse VEBO IC ICP -10 -500 -1 Collector Power Dissipation PC * 350 Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 * : Package Mounted On 99.
5% Alumina 10 8 0.
6mm.
UNIT V V V mA A mW MMBTA63/64 EPITAXIAL PLANAR PNP TRANSISTOR E L BL DIM MILLIMETERS A 2.
93+_ 0.
20 B 1.
30+0.
20/-0.
15 A G H D 23 C 1.
30 MAX D 0.
40+0.
15/-0.
05 E 2.
40+0.
30/-0.
20 1 G 1.
90 H 0.
95 J 0.
13+0.
10/-0.
05 K 0.
00 ~ 0.
10 Q PP L 0.
55 M 0.
20 MIN N 1.
00+0.
20/-0.
10 C N K J P7 Q 0.
1 MAX M 1.
EMITTER 2.
BASE 3.
COLLECTOR SOT-23 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current V(BR)CES ICBO IEBO IC=-0.
1mA, IB=0 VCB=-30V, IE=0 VEB=-10V, IC=0 DC Current Gain MMBTA63 MMBTA64 MMBTA63 MMBTA64 hFE(1) IC=-10mA, VCE=-5V hFE(2) IC=-100mA, VCE=-5V Collector-Emitter Saturation Voltage Base Emitter Voltage MMBTA63/64 MMBTA63/64 VCE(sat) VBE Current Gain Bandwith Product MMBTA63/64 fT *Pulse Test : Pulse Width 300 S, Duty Cycle 2.
0% IC=-100mA, IB=-0.
1mA IC=-100mA, VCE=-5V IC=-10mA, f=100MHz VCE=-5V MARK SPEC TYPE MARK MMBTA63 AGX MMBTA64 AFX Marking A XType Name MIN.
-30 5,000 10,000 10,000 20,000 - TYP.
- - MAX.
- -0.
1 -0.
1 - -1.
5 UNIT V A A V - - -2.
0 V 125 - - MHz Lot No.
2008.
8.
29 Revision No : 5 1/2 DC CURRENT GAIN hFE MMBTA63/64 1M 300k 100k 30k 10k 3k 1k -1 h FE - I C VCE =-5V -3 -10 -30 -100 -300 COLLECTOR CURRENT I C (mA) -1k CURRENT GAIN BANDWIDTH PRODUCT f T (MHz) 1k 300 100 30 10 3 1 -1 fT - IC VCE =-5V -3 -10 -30 -100 -300 COLLECTOR CURRENT IC (mA) -1k -10 -3 -1 -0.
3 -0.
1 -0.
03 -0.
01 -1 VBE(sat) , VCE(sat) - I C I C =1000I B VBE(sat)...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)