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KU086N10P

KEC
Part Number KU086N10P
Manufacturer KEC
Description N-Channel MOSFET
Published Jun 21, 2016
Detailed Description SEMICONDUCTOR TECHNICAL DATA General Description This Trench MOSFET has better characteristics, such as fast switching...
Datasheet PDF File KU086N10P PDF File

KU086N10P
KU086N10P

Overview
SEMICONDUCTOR TECHNICAL DATA General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.
It is mainly suitable for DC/DC Converter, Synchronous Rectification and a load switch in battery powered applications FEATURES VDSS= 100V, ID= 95A Drain-Source ON Resistance : RDS(ON)=8.
6m (Max.
) @VGS = 10V MAXIMUM RATING (Tc=25 ) CHARACTERISTIC RATING SYMBOL UNIT KU086N10P KU086N10F Drain-Source Voltage Gate-Source Voltage VDSS VGSS 100 V 20 V @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above 25 ID IDP EAS EAR dv/dt PD 95 50 60 32.
5 400* 570 7.
1 4.
5 167 50 1.
33 0.
4 A mJ mJ V/ns W W/ Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Tj Tstg 150 -55 ~ 150 Thermal Resistance, Junction-to-Case RthJC 0.
75 Thermal Resistance, Junction-to-Ambient RthJA 62.
5 * : Drain current limited by maximum junction temperature.
2.
5 /W /W K KU086N10P/F N-ch Trench MOS FET KU086N10P KU086N10F PIN CONNECTION 2011.
1.
20 Revision No : 0 1/7 KU086N10P/F ELECTRICAL CHARACTERISTICS (Tc=25 ) Static CHARACTERISTIC SYMBOL TEST CONDITION Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain Cut-off Current Gate Threshold Voltage Gate Leakage Current Drain-Source ON Resistance Dynamic BVDSS ID=250 A, VGS=0V BVDSS/ Tj ID=5mA, Referenced to 25 IDSS VDS=100V, VGS=0V, Vth VDS=VGS, ID=250 A IGSS VGS= 20V, VDS=0V RDS(ON) VGS=10V, ID=47.
5A Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay time Turn-on Rise time Turn-off Delay time Turn-off Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Ratings Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss VDS=80V, ID=80A VGS=10V (Note4,5) VDD=50V ID...


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