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3DD4515

Part Number	3DD4515
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Jun 18, 2016
Detailed Description	isc Silicon NPN Power Transistor 3DD4515 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·Coll...
Datasheet	3DD4515 PDF File

Overview

isc Silicon NPN Power Transistor 3DD4515 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.
0V(Max) @IC=10A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier,high speed switching and regulated power supply applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=75℃ TJ Junction Temperature 15 A 120 W 150 ℃ Tstg Storage Temperat...

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