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3DD15C

Part Number	3DD15C
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Jun 18, 2016
Detailed Description	INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD15C DESCRIPTION ·Collector-Emitte...
Datasheet	3DD15C PDF File

Overview

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD15C DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min.
) ·DC Current Gain- : hFE= 30~250(Min.
)@IC= 2A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.
5V(Max)@ IC= 2.
5A APPLICATIONS ·Designed for B&W TV horizontal output , regulated power supply and power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous 5A PC Collector Power Dissipation@TC=75℃ 50 W TJ Junction Temperature 175 ℃ Tstg Storage Temper...

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