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2SB1531

Part Number	2SB1531
Manufacturer	Inchange Semiconductor
Description	Silicon PNP Power Transistor
Published	Jun 18, 2016
Detailed Description	isc Silicon PNP Darlington Power Transistor 2SB1531 DESCRIPTION ·High DC Current Gain- : hFE= 5000(Min)@IC= -5A ·Low-C...
Datasheet	2SB1531 PDF File

Overview

isc Silicon PNP Darlington Power Transistor 2SB1531 DESCRIPTION ·High DC Current Gain- : hFE= 5000(Min)@IC= -5A ·Low-Collector Saturation Voltage- : VCE(sat)= -2.
5V(Max.
)@IC= -5A ·Complement to Type 2SD2340 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -130 V VCEO Collector-Emitter Voltage -130 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature -6 A 50 W 3 150 ℃ Tstg S...

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