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2SB1261-K

Part Number	2SB1261-K
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Jun 18, 2016
Detailed Description	isc Silicon NPN Power Transistors DESCRIPTION ·Low Collector Saturation Voltage ·High Power Dissipation- : PC= 10W(Max)...
Datasheet	2SB1261-K PDF File

Overview

isc Silicon NPN Power Transistors DESCRIPTION ·Low Collector Saturation Voltage ·High Power Dissipation- : PC= 10W(Max)@TC=25℃ ·Complement to Type 2SD1899-K ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio amplifier and switching, especially in hybrid integrated circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -3 A 10 W 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SB1261-K...

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