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2SA1082

Part Number	2SA1082
Manufacturer	Inchange Semiconductor
Description	Silicon PNP Power Transistor
Published	Jun 18, 2016
Detailed Description	isc Silicon PNP Transistor DESCRIPTION ·High Voltage ·Minimum Lot-to-Lot variations for robust device performance and r...
Datasheet	2SA1082 PDF File

Overview

isc Silicon PNP Transistor DESCRIPTION ·High Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Design For Amplifier and general purpose applications .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -100 mA PD Collector Power Dissipation@TA=25℃ 400 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1082 isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon PNP Transistor 2SA1082 ELECTRICAL CHARACTERISTICS T...

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