DatasheetsPDF.com

2N6379

Part Number	2N6379
Manufacturer	Inchange Semiconductor
Description	Silicon PNP Power Transistors
Published	Jun 18, 2016
Detailed Description	INCHANGE Semiconductor isc Silicon PNP Power Transistors isc Product Specification 2N6379 DESCRIPTION ·Low Collector S...
Datasheet	2N6379 PDF File

Overview

INCHANGE Semiconductor isc Silicon PNP Power Transistors isc Product Specification 2N6379 DESCRIPTION ·Low Collector Saturation Voltage ·High DC Current Gain ·High Power Dissipation APPLICATIONS ·Designed for use in industrial-military power amplifier and switching circuit application.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -140 V VCE0 Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -50 A IB Base Current-Continuous -20 A PC Collector Power Dissipation TJ Junction Temperature Tstg Storage Temperature 250 W -65~200 ℃ -65~200 ℃ isc website：www.
iscsemi.
cn 1 isc & iscsemi i...

Similar Datasheet

2N6300 NPN Darlington Power Silicon Transistor - VPT
2N6300 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS - Central Semiconductor
2N6300 PNP DARLINGTON POWER SILICON TRANSISTOR - Microsemi
2N6300 Silicon NPN Power Transistors - Savantic
2N6300 DARLINGTON SILICON POWER TRANSISTORS - Seme LAB
2N6301 NPN Darlington Power Silicon Transistor - VPT
2N6301 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS - Central Semiconductor
2N6301 PNP DARLINGTON POWER SILICON TRANSISTOR - Microsemi
2N6301 Silicon NPN Power Transistors - Savantic
2N6301 DARLINGTON SILICON POWER TRANSISTORS - Seme LAB

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)