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TMD3N50ZG

Part Number	TMD3N50ZG
Manufacturer	TRinno
Description	N-channel MOSFET
Published	Jun 16, 2016
Detailed Description	Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package ...
Datasheet	TMD3N50ZG PDF File

Overview

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D-PAK TMD3N50Z(G)/TMU3N50Z(G) BVDSS 500V N-channel MOSFET ID RDS(on) 2.
5A <2.
8W I-PAK Device TMD3N50Z / TMU3N50Z TMD3N50ZG / TMU3N50ZG Package D-PAK/I-PAK D-PAK/I-PAK Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) TC = 25 ℃ TC = 100 ℃ Single Pulse Avalanche Energy (Note 2) Repetitive Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation TC = 25 ℃ Derate above 25 ℃ Peak Diode Recovery dv/dt (Note 3) Operating Junction and S...

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