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2SD1662

Part Number	2SD1662
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Jun 16, 2016
Detailed Description	INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification 2SD1662 DESCRIPTION ·High...
Datasheet	2SD1662 PDF File

Overview

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification 2SD1662 DESCRIPTION ·High DC Current Gain : hFE= 1000(Min.
)@ IC= 15A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min.
) ·Low Collector Saturation Voltage : VCE(sat) = 1.
5V(Max.
)@ IC= 15A APPLICATIONS ·Designed for high current switching application.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 100 V 5V IC Collector Current-Continuous 15 A IB Base Current- Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 1A 100 W 150 ℃ Tstg Storage Temperatu...

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