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2SA1002

Part Number	2SA1002
Manufacturer	INCHANGE
Description	Silicon PNP Power Transistor
Published	Jun 16, 2016
Detailed Description	isc Silicon PNP Power Transistor DESCRIPTION ·High Current Capability ·Collector-Emitter Breakdown Voltage- : V(BR)CEO=...
Datasheet	2SA1002 PDF File

Overview

isc Silicon PNP Power Transistor DESCRIPTION ·High Current Capability ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min.
) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -12 A 120 W 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SA1002 isc website：www.
iscsemi.
com 1 isc & iscsemi is registered tr...

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