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MT3S19R

Toshiba Semiconductor
Part Number MT3S19R
Manufacturer Toshiba Semiconductor
Description Silicon NPN Epitaxial Planar Type Transistor
Published Jun 14, 2016
Detailed Description TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S19R MT3S19R VHF-UHF Band Low-Noise, Low-Distortion Amplifier ...
Datasheet PDF File MT3S19R PDF File

MT3S19R
MT3S19R

Overview
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S19R MT3S19R VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications FEATURES • Low Noise Figure:NF=1.
5dB(Typ.
) (@ f=1GHz) • High Gain:|S21e|2=13dB(Typ.
) (@ f=1GHz) Marking 3 1.
8±0.
1 0.
05　M A 0.
42+-00.
.
0058 3 Unit: mm 0.
17 +0.
08 -0.
07 2.
4±0.
1 1 0.
95 2 0.
95 2.
9±0.
2 A 0.
8 -+00.
.
0058 T6 12 1.
Base 2.
Emitter 3.
Collector Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector-current Base-current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC(Note1) Tj Tstg Rating 12 6 2 80 10 3...


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