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MT3S19

Toshiba Semiconductor
Part Number MT3S19
Manufacturer Toshiba Semiconductor
Description Silicon NPN Epitaxial Planar Type Transistor
Published Jun 14, 2016
Detailed Description TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S19 VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Fea...
Datasheet PDF File MT3S19 PDF File

MT3S19
MT3S19

Overview
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S19 VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Features • Low-Noise Figure:NF=1.
5 dB (typ.
) (@ f=1 GHz) • High Gain:|S21e|2=12.
5 dB (typ.
) (@ f=1 GHz) MT3S19 Unit: mm Marking 3 T6 1.
Base 2.
Emitter 3.
Collector 12 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit S-Mini JEDEC TO-236 JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.
012 g (typ.
) Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector-current Base-current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB Pc PC(Note 1) Tj Tstg 12 6 2 80 10 180 800 150 −55 to ...


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