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MT3S16T

Toshiba Semiconductor
Part Number MT3S16T
Manufacturer Toshiba Semiconductor
Description Silicon NPN Epitaxial Planar Type Transistor
Published Jun 14, 2016
Detailed Description TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S16T VHF~UHF Band Oscillator and Amplifier Applications • fT is ...
Datasheet PDF File MT3S16T PDF File

MT3S16T
MT3S16T

Overview
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S16T VHF~UHF Band Oscillator and Amplifier Applications • fT is high and current dependability is excellent.
• The Cre curve is flat.
:|S21e|2 = 4.
5 dB (@ 2 V, 10 mA, 1 GHz) :NF = 2.
4 dB (@ 2 V, 10 mA, 1 GHz) MT3S16T Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 10 V Collector-emitter voltage VCEO 5 V Emitter-base voltage VEBO 2 V Collector current IC 60 mA Base current Collector power dissipation IB 10 mW PC 100 mW TESM 1.
Base 2.
Emitter 3.
Collector Junction temperature Storage temperature range Tj 125 °C Tstg −55~125 °C JEDEC ― Note: Using continuou...


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