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MT3S12T

Part Number	MT3S12T
Manufacturer	Toshiba Semiconductor
Description	Silicon NPN Epitaxial Planar Type Transistor
Published	Jun 14, 2016
Detailed Description	TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S12T VHF~UHF Band Low-Noise Amplifier Applications VHF~UHF Band ...
Datasheet	MT3S12T PDF File

Overview

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S12T VHF~UHF Band Low-Noise Amplifier Applications VHF~UHF Band Oscillator Applications • Superior performance in oscillator applications.
• Superior noise characteristics : NF = 1.
7 dB, |S21e|2 = 4.
5 dB (f = 2 GHz) MT3S12T Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector- base voltage Collector- emitter voltage Emitter- base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 13 6 1 40 10 100 125 −55~125 Unit V V V mA mW mW °C °C TESM 1.
Base 2.
Emitter 3.
Collector JEDEC ― JEITA ― TOSHIBA 2-1B1A ...

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