DatasheetsPDF.com

MT3S11T

Part Number	MT3S11T
Manufacturer	Toshiba Semiconductor
Description	Silicon NPN Epitaxial Planar Type Transistor
Published	Jun 14, 2016
Detailed Description	TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S11T VHF~UHF Band Low-Noise Amplifier Applications VHF~UHF Band ...
Datasheet	MT3S11T PDF File

Overview

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S11T VHF~UHF Band Low-Noise Amplifier Applications VHF~UHF Band Oscillator Applications • Superior performance in oscillator applications.
• Superior noise characteristics : NF = 2.
4 dB, |S21e|2 = 3.
5 dB (f = 2 GHz) MT3S11T Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector- base voltage Collector- emitter voltage Emitter- base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 13 6 1 40 10 100 125 −55~125 Unit V V V mA mW mW °C °C TESM 1.
Base 2.
Emitter 3.
Collector JEDEC ― JEITA ― TOSHIBA 2-1B1A ...

Similar Datasheet

MT3S106FS Silicon-Germanium NPN Epitaxial Planar Type Transistor - Toshiba Semiconductor
MT3S107FS Silicon-Germanium NPN Epitaxial Planar Type Transistor - Toshiba Semiconductor
MT3S108FS Silicon-Germanium NPN Epitaxial Planar Type Transistor - Toshiba Semiconductor
MT3S111 Silicon-Germanium NPN Epitaxial Planar Type Transistor - Toshiba Semiconductor
MT3S111P Silicon-Germanium NPN Epitaxial Planar Type Transistor - Toshiba Semiconductor
MT3S111TU Silicon-Germanium NPN Epitaxial Planar Type Transistor - Toshiba Semiconductor
MT3S113 Silicon-Germanium NPN Epitaxial Planar Type Transistor - Toshiba Semiconductor
MT3S113P Silicon-Germanium NPN Epitaxial Planar Type Transistor - Toshiba Semiconductor
MT3S113TU Silicon-Germanium NPN Epitaxial Planar Type Transistor - Toshiba Semiconductor
MT3S11FS Silicon NPN Epitaxial Planar Type Transistor - Toshiba Semiconductor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)