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MT3S113TU

Toshiba Semiconductor
Part Number MT3S113TU
Manufacturer Toshiba Semiconductor
Description Silicon-Germanium NPN Epitaxial Planar Type Transistor
Published Jun 14, 2016
Detailed Description MT3S113TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113TU VHF-UHF Band Low-Noise, Low-Distorti...
Datasheet PDF File MT3S113TU PDF File

MT3S113TU
MT3S113TU

Overview
MT3S113TU TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113TU VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications FEATURES • Low Noise Figure:NF = 1.
15dB (typ.
) (@ f=1GHz) • High Gain:|S21e|2 = 12.
5dB (typ.
) (@ f=1GHz) 2.
1±0.
1 1.
7±0.
1 Unit: mm 0.
3-+00.
.
015 1 2 3 2.
0±0.
1 0.
65±0.
05 0.
166±0.
05 0.
7±0.
05 Marking 3 R7 1.
1.
ベBーasスe 2.
2.
エEミmiッtteタr 3.
3.
コCレollクecタtor 1 2 Absolute Maximum Ratings (Ta = 25°C) UFM JEDEC - JEITA - TOSHIBA 2-2U1B Weight : 6.
6mg (typ.
) Characteristics Symbol Rating Unit Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Collector-current Base-current Collector power dissipation Junction tem...


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