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MT3S113P

Part Number	MT3S113P
Manufacturer	Toshiba Semiconductor
Description	Silicon-Germanium NPN Epitaxial Planar Type Transistor
Published	Jun 14, 2016
Detailed Description	TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113P MT3S113P VHF-UHF Band Low-Noise, Low-Distortio...
Datasheet	MT3S113P PDF File

Overview

TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113P MT3S113P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications Unit: mm FEATURES • Low Noise Figure:NF = 1.
15dB (typ.
) (@ f=1GHz) • High Gain:|S21e|2 = 10.
5dB (typ.
) (@ f=1GHz) Marking R7 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Pw-Mini JEDEC - JEITA SC-62 TOSHIBA 2-5K1A Weight : 0.
05 g ( typ.
) Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCES 13 V VCEO 5.
3 V VEBO 0.
6 V IC 100 mA IB 10 mA PC(Note1) 1.
6 W Tj 150 ...

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