DatasheetsPDF.com

MT3S113

Part Number	MT3S113
Manufacturer	Toshiba Semiconductor
Description	Silicon-Germanium NPN Epitaxial Planar Type Transistor
Published	Jun 14, 2016
Detailed Description	TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113 VHF-UHF Band Low-Noise, Low-Distortion Amplifier ...
Datasheet	MT3S113 PDF File

Overview

TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S113 VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications MT3S113 Unit: mm FEATURES • Low Noise Figure:NF=1.
15dB (typ.
) (@ f=1GHz) • High Gain:|S21e|2=11.
8dB (typ.
) (@ f=1GHz) Marking R7 1.
Base 2.
Emitter 3.
Collector Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit S-Mini JEDEC TO-236 JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.
012 g (typ.
) Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Collector-current Base-current Collector power dissipation Junction temperature Storage temperature range VCES 13 V VCEO 5.
3 V VEBO 0.
6 V IC 100 mA IB 10 mA ...

Similar Datasheet

MT3S106FS Silicon-Germanium NPN Epitaxial Planar Type Transistor - Toshiba Semiconductor
MT3S107FS Silicon-Germanium NPN Epitaxial Planar Type Transistor - Toshiba Semiconductor
MT3S108FS Silicon-Germanium NPN Epitaxial Planar Type Transistor - Toshiba Semiconductor
MT3S111 Silicon-Germanium NPN Epitaxial Planar Type Transistor - Toshiba Semiconductor
MT3S111P Silicon-Germanium NPN Epitaxial Planar Type Transistor - Toshiba Semiconductor
MT3S111TU Silicon-Germanium NPN Epitaxial Planar Type Transistor - Toshiba Semiconductor
MT3S113 Silicon-Germanium NPN Epitaxial Planar Type Transistor - Toshiba Semiconductor
MT3S113P Silicon-Germanium NPN Epitaxial Planar Type Transistor - Toshiba Semiconductor
MT3S113TU Silicon-Germanium NPN Epitaxial Planar Type Transistor - Toshiba Semiconductor
MT3S11FS Silicon NPN Epitaxial Planar Type Transistor - Toshiba Semiconductor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)