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MT3S111TU

Toshiba Semiconductor
Part Number MT3S111TU
Manufacturer Toshiba Semiconductor
Description Silicon-Germanium NPN Epitaxial Planar Type Transistor
Published Jun 14, 2016
Detailed Description TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111TU MT3S111TU VHF-UHF Low-Noise, Low-Distortion A...
Datasheet PDF File MT3S111TU PDF File

MT3S111TU
MT3S111TU

Overview
TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111TU MT3S111TU VHF-UHF Low-Noise, Low-Distortion Amplifier Application Features • Low-Noise Figure: NF=0.
85 dB (typ.
) (@ f=1 GHz) • High Gain: |S21e|2=12.
5 dB (typ.
) (@ f=1 GHz) 2.
0±0.
1 0.
65±0.
05 2.
1±0.
1 1.
7±0.
1 Unit: mm 0.
3-+00.
.
015 1 2 3 0.
166±0.
05 0.
7±0.
05 Marking 3 R5 1 2 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit 1.
BASE 2.
EMITTER 3.
COLLECTOR UFM JEDEC - JEITA - TOSHIBA 2-2U1B Weight: 6.
6 mg (typ.
) Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Collector-current Base-current Collector power dissipation Junction temperature Storage tem...


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