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MT3S106FS

Part Number	MT3S106FS
Manufacturer	Toshiba Semiconductor
Description	Silicon-Germanium NPN Epitaxial Planar Type Transistor
Published	Jun 14, 2016
Detailed Description	MT3S106FS TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT3S106FS VCO OSCILLETOR STAGE VHF-UHF Low Noi...
Datasheet	MT3S106FS PDF File

Overview

MT3S106FS TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT3S106FS VCO OSCILLETOR STAGE VHF-UHF Low Noise Amplifier Application FEATURES • Low Noise Figure :NF=1.
2dB (@f=2GHz) • High Gain:|S21e|2=10dB (@f=2GHz) Marking 3 41 2 1 +0.
02 -0.
04 0.
6 ±0.
05 0.
35±0.
05 0.
15±0.
05 Unit:mm 1.
0±0.
05 0.
8±0.
05 1 3 0.
1±0.
05 2 0.
1±0.
05 0.
2±0.
05 0.
48 0.
1±0.
05 Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector-Current Base-Current Collector Power dissipation Junction temperature Storage temperature Range Symbol VCBO VCEO VEBO IC IB PC(Note 1) Tj Tstg Rating 13 6 1 80 20 100 150 −55~150 Unit V V V mA ...

Similar Datasheet

MT3S106FS Silicon-Germanium NPN Epitaxial Planar Type Transistor - Toshiba Semiconductor

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