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MT3S111

Toshiba Semiconductor
Part Number MT3S111
Manufacturer Toshiba Semiconductor
Description Silicon-Germanium NPN Epitaxial Planar Type Transistor
Published Jun 14, 2016
Detailed Description TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111 VHF-UHF Low-Noise, Low-Distortion Amplifier Appli...
Datasheet PDF File MT3S111 PDF File

MT3S111
MT3S111

Overview
TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type MT3S111 VHF-UHF Low-Noise, Low-Distortion Amplifier Applications Features • Low-Noise Figure: NF=0.
9 dB (typ.
) (@ f=1 GHz) • High Gain:|S21e|2=12 dB (typ.
) (@ f=1 GHz) MT3S111 Unit: mm Marking R5 Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Collector-current Base-current Collector power dissipation Collector power dissipation Junction temperature Storage temperature range Symbol VCES VCEO VEBO IC IB PC PC (Note 1) Tj Tstg Rating 13 6 0.
6 100 10 160 700 150 −55 to 150 Unit V V V mA mA mW mW °C °C 1.
Base 2.
Emitter 3.
Collector S-Mini JEDEC...


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