IS66WVE2M16DALL Datasheet

IS66WVE2M16DALL 1.8V Core Async/Page PSRAM

PSRAM products are high-speed, CMOS pseudo-static random access memory developed for low-power, portable applications. The 32Mb DRAM core device is organized as 2 Meg x 16 bits. These devices include the industry-standard, asynchronous memory interface found on other low-power SRAM or pseudo-SRAM (P.

Features

 Asynchronous and page mode interface
 Dual voltage rails for optional performance
 VDD 1.8V, VDDQ 1.8V
 Page mode read access
 Interpage Read access : 70ns
 Intrapage Read access : 20ns
 Low Power Consumption
 Asynchronous Operation < 30 mA
 Intrapage Read < 18mA
 Standby < 150 uA (max.)
 Deep power-down (DPD) < 3uA (Typ)
 Low Power Feature
 Temperature Controlled Refresh
 Partial Array Refresh
 Deep power-down (DPD) mode
 Operating temperature Range Industrial -40°C~85°C
 Package: 48-ball TFBGA Copyright © 2012 Integrated Silicon Solution, Inc. All rights reserved. ISSI re.