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MS1337

Advanced Power Technology
Part Number MS1337
Manufacturer Advanced Power Technology
Description RF & MICROWAVE TRANSISTORS
Published Jun 1, 2016
Detailed Description RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS Features • 175 MHz • 12.5 VOLTS • POUT = 30W MINIMUM • GP = 10 dB GAI...
Datasheet PDF File MS1337 PDF File

MS1337
MS1337

Overview
RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS Features • 175 MHz • 12.
5 VOLTS • POUT = 30W MINIMUM • GP = 10 dB GAIN • COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1337 is a 12.
5 volt epitaxial silicon NPN planar transistor designed primarily for Class C, VHF communication applications.
The MS1337 utilizes an emitter ballasted die geometry to withstand severe load mismatch conditions.
MS1337 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCBO VCEO VCES VEBO IC Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current PDISS TJ Power Dissipation Junction Temperature TSTG Storage Temperature Thermal Data RTH(J-C)...


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