N-Channel MOSFET - SILIKRON
Description
Main Product Characteristics:
VDSS
600V
RDS(on) 0.
69ohm(typ.
)
ID 10A
Features and Benefits:
TO220F
Advanced MOSFET process technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature
SSF10N60F
Marking and pin Assignment
Schematic diagram
Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.
These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications
Absolute max Rating:
Symbol ID @ TC = 25°C ID @ TC = 100°C IDM
PD @TC = 25°C
VDS VGS EAS IAS TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=14.
2mH Avalanche Current @ L=14.
2mH Operating Junction and Storage Temperature Range
Max.
10 6 40 156 1.
2 600 ± 30 700 10
-55 to + 150
Units
A
W W/°C
V V mJ A °C
©Silikron Semiconductor CO.
,LTD.
2013.
06.
26 www.
silikron.
com
Version : 1.
2
page 1 of 8
SSF10N60F
Thermal Resistance
Symbol RθJC
RθJA
Characterizes Junction-to-case③ Junction-to-ambient (t ≤ 10s) ④ Junction-to-Ambient (PCB mounted, steady-state) ④
Typ.
— — —
Max.
0.
8 62 40
Units ℃/W ℃/W ℃/W
Electrical Characterizes @TA=25℃ unless otherwise specified
Symbol V(BR)DSS
RDS(on)
VGS(th)
IDSS
IGSS
Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Parameter Drain-to-Source breakdown voltage
Static Drain-to-Source on-resistance
Gate threshold voltage
Drain-to-Source leakage current
Gate-to-Source forward leakage
Total gate charge Gate-to-Source charge Gate-to-Drain("Miller") charge Turn-on delay time Rise time Turn-Off delay time Fall time Input capacitance Output capacit...
Similar Datasheet
