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MAGX-000035-01000S

MA-COM
Part Number MAGX-000035-01000S
Manufacturer MA-COM
Description Power Transistor
Published May 26, 2016
Detailed Description MAGX-000035-010000 MAGX-000035-01000S GaN on SiC HEMT Power Transistor 10W CW, 30 MHz - 3.5 GHz Features  GaN Depletio...
Datasheet PDF File MAGX-000035-01000S PDF File

MAGX-000035-01000S
MAGX-000035-01000S

Overview
MAGX-000035-010000 MAGX-000035-01000S GaN on SiC HEMT Power Transistor 10W CW, 30 MHz - 3.
5 GHz Features  GaN Depletion-Mode HEMT Microwave Transistor  Common-Source configuration  No internal matching  Broadband Class AB operation  RoHS* Compliant  +50 V Typical Operation  MTTF = 600 years Description The MAGX-000035-01000X is a gold-metalized unmatched Gallium Nitride (GaN) on Silicon Carbide RF power transistor suitable for a variety of RF power amplifier applications.
Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, and ruggedness over multiple octave bandwidths for today’s demanding application...


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