DatasheetsPDF.com

H01N60

HI-SINCERITY
Part Number H01N60
Manufacturer HI-SINCERITY
Description N-Channel Power Field Effect Transistor
Published May 23, 2016
Detailed Description HI-SINCERITY MICROELECTRONICS CORP. H01N60 Series N-Channel Power Field Effect Transistor Description This high voltage...
Datasheet PDF File H01N60 PDF File

H01N60
H01N60

Overview
HI-SINCERITY MICROELECTRONICS CORP.
H01N60 Series N-Channel Power Field Effect Transistor Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time.
In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes.
The new energy efficient design also offers a drain-to-source diode with a fast recovery time.
Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critica...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)