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FPD6836

Part Number	FPD6836
Manufacturer	Filtronic
Description	0.25W POWER PHEMT
Published	May 23, 2016
Detailed Description	0.25W POWER PHEMT FPD6836 Datasheet v3.0 FEATURES: • 25.5 dBm Output Power (P1dB) • 10 dB Power Gain at 12 GHz • 16.5 ...
Datasheet	FPD6836 PDF File

Overview

0.
25W POWER PHEMT FPD6836 Datasheet v3.
0 FEATURES: • 25.
5 dBm Output Power (P1dB) • 10 dB Power Gain at 12 GHz • 16.
5 dB Max Stable Gain at 12 GHz • 12 dB Maximum Stable Gain at 24 GHz • 50% Power-Added Efficiency • 8V Operation GENERAL DESCRIPTION: The FPD6836 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.
25 µm by 360 µm Schottky barrier gate, defined by high -resolution stepper-based photolithography.
The recessed gate structure minimizes parasitics to optimize performance.
The epitaxial structure and processing have been optimized for reliable high-power applications.
ELECTRICAL SPECIFICATIONS1: LAYOUT: TYPICAL APPLICATIONS: • Narrowband and...

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