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TDM3415S

Techcode
Part Number TDM3415S
Manufacturer Techcode
Description N-Channel Enhancement Mode MOSFET
Published May 23, 2016
Detailed Description P-Channel Enhancement Mode MOSFET Datasheet TDM3415S Features -20V/-1.5A , RDS(ON)=130mΩ(typ.) @ VGS=-4.5V RDS(ON)=170...
Datasheet PDF File TDM3415S PDF File

TDM3415S
TDM3415S


Overview
P-Channel Enhancement Mode MOSFET Datasheet TDM3415S Features -20V/-1.
5A , RDS(ON)=130mΩ(typ.
) @ VGS=-4.
5V RDS(ON)=170mΩ(typ.
) @ VGS=-2.
5V Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) Pin Description Top View of SOT23-3L Applications G Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems.
Ordering and Marking Information P-Channel MOSFET TDM3415S☐ ☐ -☐ ☐ ☐ Lead Free Code Handing Code Temp.
Range Packge Code Packge Code A: SOT23-3L Operating Junction Temp.
Rang C: -55 to 150°C Handing Code TU:Tube TR:Tape & Reel Lead Free Code: L:Lead Free Device Blank:Original Device TDM3415S M23 X X:Date Code Note: TECHCODE lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations.
TECHCODE lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature.
TECHCODE reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders.
August, 20, 2006.
1 Techcode Semiconductor Limited P-Channel Enhancement Mode MOSFET Datasheet TDM3415S Absolute Maximum Ratings (T = 25°C unless otherwise noted) A Symbol VDSS VGSS ID* IDM* IS* TJ TSTG PD* RθJA* Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 300µs Pulsed Drain Current Diode Continuous Forward Current Maximum Junction Temperature Storage Temperature Range VGS=-4.
5V Maximum Power Dissipation Thermal Resistance-Junction to Ambient TA=25°C TA=100°C Rating -20 ±12 -1.
5 -6 -1 150 -55 to 150 0.
83 0.
3 150 Unit V A A °C W °C/W Note: *Surface Mounted on 1in2 pad area, t ≤ 10sec.
Electrical Characteristics (T = 25°C unless otherwise noted) A Symbol Param...



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