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NTE2689

Part Number	NTE2689
Manufacturer	NTE
Description	Silicon NPN Transistor
Published	May 20, 2016
Detailed Description	NTE2689 Silicon NPN Transistor Audio Power Amp SOT−23 Type Package Description: The NTE2689 is a silicon NPN transistor...
Datasheet	NTE2689 PDF File

Overview

NTE2689 Silicon NPN Transistor Audio Power Amp SOT−23 Type Package Description: The NTE2689 is a silicon NPN transistor in an SOT−23 surface mount type package designed for use in audio power amplifier applications.
Features: D High DC Current Gain Absolute Maximum Ratings: Collector−Base Voltage, VCBO .
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35V Collector−Emitter Voltage, VCEO .
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30V Emitter−Base Voltage, VEBO .
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5V Collector Current, IC .
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800mA Collector Dissipation (Note 1), PC .
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350mW Operating Junction Temperature, TJ .
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+1505C Storage Temperature Range, Tstg .
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−555 to +1505C Note 1.
Package mounted on 99.
5% alumina 10 x 8 x 0.
6mm.
Electrical Characteristics: (TA = +255C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector−Base Breakdown Voltage BVCBO IC = 1005 A, IE = 0 35 − − V Collector−Emitter Breakdown Voltage BVCEO IC = 1mA, IB = 0 30 − − V Emitter−Base Breakdown Voltage BVEBO IE = 105 A, IC = 0 5 − −V Collector Cut−Off Current ICBO VCB = 35V, IE = 0 − − 0.
1 5 A Emitter Cut−Off Current IEBO VEB = 5V, IC = 0 − − 0.
1 5 A DC Current Gain hFE VCE = 1V, IC = 100mA 160 − 320 Collector−Emitter Saturation Voltage VCE(sat) IC = 500mA, IB = 50mA − − 0.
5 V Transition Frequency fT VCE = 5V, IC = 10mA − 120 − MHz Collector Output Capacitance ...

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