DatasheetsPDF.com

1SS184

Part Number	1SS184
Manufacturer	LGE
Description	Switching Diodes
Published	May 17, 2016
Detailed Description	1.ANODE 2. ANODE 3. CATHODE Features Low forward voltage : VF(3)=0.9V(typ.) Fast reverse recovery time : trr=1.6...
Datasheet	1SS184 PDF File

Overview

1.
ANODE 2.
ANODE 3.
CATHODE Features Low forward voltage : VF(3)=0.
9V(typ.
) Fast reverse recovery time : trr=1.
6ns(typ.
) MARKING: B3 Maximum Ratings @TA=25℃ Parameter Non-Repetitive Peak reverse voltage DC Blocking Voltage Forward Continuous Current Average Rectified Output Current Power Dissipation Junction temperature Storage temperature range Symbol VRM VR IFM IO PD TJ TSTG 1SS184 Switching Diodes SOT-23 Dimensions in inches and (millimeters) Limits 85 80 300 100 150 125 -55-125 Unit V V mA mA mW ℃ ℃ Electrical Characteristics @TA=25℃ Parameter Reverse Breakdown Voltage Forward voltage Reverse current Capacitance between terminals Reverse recovery time Symbol V (BR)R VF1...

Similar Datasheet

1SS101 SUPER HIGH SPEED SWITCHING DIODE - XIN SEMICONDUCTOR
1SS101 Mixer Diode - NEC
1SS104 SILICON DIODE - Toshiba Semiconductor
1SS106 Silicon Schottky Barrier Diode - Hitachi Semiconductor
1SS106 SILICON SCHOTTKY BARRIER DIODE - SEMTECH
1SS106 Silicon Schottky Barrier Diode - Renesas
1SS106 SMALL SIGNAL SCHOTTKY DIODES - JINAN JINGHENG ELECTRONICS
1SS108 Silicon Schottky Barrier Diode - Hitachi Semiconductor
1SS110 Silicon Diode - Hitachi Semiconductor
1SS110 Switching Diode - Leshan Radio Company

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)