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Z123 Datasheet

Silicon NPN Phototransistor

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Phototransistors
PNZ123S
Silicon NPN Phototransistor
For optical control systems
Can be combined with LN62S to form an photo interrupter
Features
High sensitivity
Low dark current
Fast response : tr = 3.5 µs (typ.)
Small size (ø 3) ceramic package
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Collector to emitter voltage
Emitter to collector voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Symbol
VCEO
VECO
IC
PC
Topr
Tstg
Ratings
20
5
10
50
–25 to +85
–30 to +100
Unit
V
V
mA
mW
˚C
˚C
ø3.0±0.2
Unit : mm
ø0.3±0.05
ø0.45±0.05
0.9±0.15
21
1: Emitter
2: Collector
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Dark current
Collector photo current
Peak sensitivity wavelength
Acceptance half angle
ICEO VCE = 10V
1
ICE(L) VCE = 10V, L = 1000 lx*1
400
λP VCE = 10V
800
θ Measured from the optical axis to the half power point
30
100 nA
700 µA
nm
deg.
Rise time
Fall time
tr*2
tf*2
VCC = 10V, ICE(L) = 1mA, RL = 100
3.5
5
µs
µs
*1 Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
*2 Switching time measurement circuit
Sig.IN
50
VCC
(Input pulse)
Sig.OUT
RL
(Output pulse) td
tr
90%
10%
tf
td : Delay time
tr : Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
tf : Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
1
Panasonic Semiconductor
Panasonic Semiconductor



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