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X22C10DI Datasheet

Nonvolatile Static RAM

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X22C10DI pdf
X22C10
256 Bit
X22C10
Nonvolatile Static RAM
64 x 4
FEATURES
High Performance CMOS
—120ns RAM Access Time
High Reliability
—Store Cycles: 1,000,000
—Data Retention: 100 Years
Low Power Consumption
—Active: 40mA Max.
—Standby: 100µA Max.
Infinite Array Recall, RAM Read and Write Cycles
Nonvolatile Store Inhibit: VCC = 3.5V Typical
Fully TTL and CMOS Compatible
JEDEC Standard 18-Pin 300-mil DIP
100% Compatible with X2210
—With Timing Enhancements
DESCRIPTION
The X22C10 is a 64 x 4 CMOS NOVRAM featuring a
high-speed static RAM overlaid bit-for-bit with a non-
volatile E2PROM. The NOVRAM design allows data to
be easily transferred from RAM to E2PROM (STORE)
and from E2PROM to RAM (RECALL). The STORE
operation is completed within 5ms or less and the
RECALL is completed within 1µs.
Xicor NOVRAMs are designed for unlimited write opera-
tions to the RAM, either RECALLs from E2PROM or
writes from the host. The X22C10 will reliably endure
1,000,000 STORE cycles. Inherent data retention is
greater than 100 years.
FUNCTIONAL DIAGRAM
NONVOLATILE E2PROM
MEMORY ARRAY
A0
A1
A2
STORE
RECALL
I/O1
I/O2
I/O3
I/O4
ROW
SELECT
CONTROL
LOGIC
INPUT
DATA
CONTROL
CS
WE
STATIC RAM
MEMORY ARRAY
COLUMN
I/O CIRCUITS
COLUMN SELECT
A3 A4 A5
PIN CONFIGURATION
PLASTIC DIP
CERDIP
STORE
ARRAY
RECALL
VCC
VSS
NC
A4
A3
A2
A1
A0
CS
VSS
STORE
1 18
2 17
3 16
4 15
5 X22C10 14
6 13
7 12
8 11
9 10
VCC
NC
A5
I/O4
I/O3
I/O2
I/01
WE
RECALL
3815 FHD F02
3815 FHD F01
A4
A3
A2
A1
A0
CS
VSS
STORE
SOIC
1 16
2 15
3 14
4 13
X22C10
5 12
6 11
7 10
89
VCC
A5
I/O4
I/O3
I/O2
I/O1
WE
RECALL
3815 FHD F08.1
© Xicor, Inc. 1991,1995 Patents Pending
3815-2.4 7/26/96 T0/CO/D3 SH
1 Characteristics subject to change without notice
Xicor
Xicor



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