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X20CZ16 Datasheet

High Speed NOVRAM

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X20CZ16 pdf
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APPLICATION NOTE
A V A I LABLE
AN56
High Speed NOVRAM
X20CZ16
FEATURES
• Fast access time: 35ns
• High reliability
—Endurance: 105 nonvolatile store operations
—Retention: 10 years minimum
• Power-on recall
—EEPROM data automatically recalled into RAM
upon power-up
• Low power CMOS
—Standby: 1mA
• Infinite EEPROM array recall, and RAM read and
write cycles
• Hardware store initiation (store cycle time < 10ms)
• Available in the 32-lead plastic leadless chip
carrier package
DESCRIPTION
The Xicor X20CZ16 is a 2K x 8 NOVRAM featuring a
high-speed static RAM overlaid bit-for-bit with a non-
volatile electrically erasable PROM (EEPROM). The
X20CZ16 is fabricated with advanced CMOS floating
gate technology to achieve high speed with low power
and wide power-supply margin.
The NOVRAM design allows data to be easily trans-
ferred from RAM to EEPROM (store) and EEPROM to
RAM (recall). The store operation is completed in
10ms or less and the recall operation is completed in
20µs or less. An automatic array recall operation
reloads the contents of the EEPROM into RAM upon
power-up.
Xicor NOVRAMS are designed for unlimited write
operations to RAM, either from the host or recalls from
EEPROM, and a minimum 100,000 store operations to
the EEPROM. Data retention is specified to be greater
than 10 years.
FUNCTIONAL DIAGRAM
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
EEPROM
Array
SRAM
Array
VCC
VSS
DQ0
DQ1 Data I/O Store/
DQ2
Recall
Control
VCC
DQ3
DQ4
DQ5
DQ6 OE
DQ7 NE
Read/Write/
Store Logic
CE
WE
REV 1.4.2 10/3/03
www.xicor.com
Characteristics subject to change without notice. 1 of 14
Xicor
Xicor



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