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W15NB50 Datasheet

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t4U.com STW15NB50
ee® STH15NB50FI
Sh N-CHANNEL 500V - 0.33- 14.6A -
ata T0-247/ISOWATT218 PowerMESHMOSFET
w.DTYPE
w STW15NB50
wwww.DataSheet4U.ScoTmH15 N B5 0 F I
VDSS
500 V
500 V
RDS(on)
< 0.36
< 0.36
ID
14.6 A
10.5 A
s TYPICAL RDS(on) = 0.33
s EXTREMELY HIGH dv/dt CAPABILITY
ms ± 30V GATE TO SOURCE VOLTAGE RATING
s 100% AVALANCHE TESTED
os VERY LOW INTRINSIC CAPACITANCES
.cs GATE CHARGE MINIMIZED
DESCRIPTION
UUsing the latest high voltage MESH OVERLAY
process, SGS-Thomson has designed an
t4advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
eproprietary edge termination structure, gives the
elowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
hand switching characteristics.
SAPPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
tas SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
aEQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
.DABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
wwVDS
VDGR
wVGS
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 k)
Gate-source Voltage
3
2
1
TO-247
3
2
1
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
Value
STW15NB50 STH15NB50FI
500
500
± 30
Uni t
V
V
V
ID
ID
IDM ( )
Ptot
dv/dt(1)
VISO
Tstg
Tj
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
Tot al Dissipation at Tc = 25 oC
Derating Factor
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
June 1998
14.6
10.5
m9.2 6.6
.co58.4
58.4
190 80
t4U0.64
1.52
e4
e4000
h-65 to 150
www.DataS150
A
A
A
W
W/oC
V/ ns
V
oC
oC
1/9
ST Microelectronics
ST Microelectronics



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