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W13NB60 Datasheet

STW13NB60

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STW13NB60
® STH13NB60FI
N - CHANNEL 600V - 0.48- 13A - TO-247/ISOWATT218
PowerMESHMOSFET
TYPE
VDSS
RDS(on)
ID
ST W13 NB6 0
600 V <0.54
13 A
www.DataSheet4U.cSoTmH13 NB 6 0F I
600 V
<0.54
8.6 A
s TYPICAL RDS(on) = 0.48
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
3
2
1
TO-247
3
2
1
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR Drain- gate Voltage (RGS = 20 k)
VGS Gate-source Voltage
ID Drain Current (continuous) at Tc = 25 oC
ID Drain Current (continuous) at Tc = 100 oC
IDM () Drain Current (pulsed)
Ptot Total Dissipation at Tc = 25 oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
VISO I nsulat ion W ithstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
Value
Un it
STW13NB60 STH13NB60FP
600 V
600 V
± 30
V
13 8.6 A
8.2 5.4 A
52 52 A
190
1.52
80
0.64
W
W /o C
4 4 V/ns
2000
-65 to 150
150
( 1) ISD 13 A, di/dt 200 Α/µs, VDD V(BR)DSS, Tj TJMAX
V
oC
oC
January 2000
1/9
STMicroelectronics
STMicroelectronics



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