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W13009 Datasheet

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STW13009
High voltage fast-switching
NPN power transistor
Features
Low spread of dynamic parameters
High voltage capability
Minimum lot-to-lot spread for reliable operation
Very high switching speed
Application
Switch mode power supplies
Description
The device is manufactured using high voltage
multi-epitaxial planar technology for high
switching speeds and medium voltage capability.
It uses a Hollow emitter structure to enhance
switching speeds.
3
2
1
TO-247
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
Marking (1)
Package
Packaging
STW13009
W13009 L
W13009 H
TO-247
Tube
1. Product is pre-selected in DC current gain (group L and group H). STMicroelectronics reserves the right to ship either
groups according to production availability. Please contact your nearest STMicroelectronics sales office for delivery details.
October 2007
Rev 1
1/11
www.st.com
11
STMicroelectronics
STMicroelectronics



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