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SILICON BRIDGE RECTIFIERS

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W005 - W10
SILICON BRIDGE RECTIFIERS
PRV : 50 - 1000 Volts
Io : 1.5 Ampere
FEATURES :
* Glass passivated chip
* High case dielectric strength
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Ideal for printed circuit board
0.22 (5.59)
0.18 (4.57)
WOB
0.39 (10.0)
0.31 (7.87)
+ AC -
1.00 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated leads solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 1.29 grams
AC -
+ AC
0.22 (5.59)
0.18 (4.57)
0.22 (5.59)
0.18 (4.57)
Dimension in inches and (millimeter)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
SYMBOL W005
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375" (9.5 mm) lead length
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Rating for fusing ( t < 8.3 ms. )
Maximum Forward Voltage per Diode at IF = 1.0 Amp.
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Ta = 25 °C
Ta = 100 °C
Typical Junction Capacitance per Diode (Note 1)
Typical Thermal Resistance (Note 2)
Operating Junction Temperature Range
Storage Temperature Range
VRRM
VRMS
VDC
IF(AV)
I FSM
I2t
VF
IR
IR(H)
CJ
RθJA
TJ
T STG
50
35
50
W01
100
70
100
W02
200
140
200
W04
400
280
400
W06
600
420
600
1.5
50
10
1.0
10
1.0
14
36
- 50 to + 150
- 50 to + 150
W08
800
560
800
W10 UNIT
1000
700
1000
Volts
Volts
Volts
Amps.
Amps.
A2S
Volts
µA
mA
pf
°C/W
°C
°C
Notes :
1 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts.
2 ) Thermal resistance from Junction to Ambient at 0.375" (9.5 mm) lead length P.C. Board mounting.
UPDATE : JANUARY 24, 2000
EIC discrete Semiconductors
EIC discrete Semiconductors



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