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U1BC44 Datasheet

TOSHIBA RECTIFIER SILICON DIFFUSED JUNCTION TYPE

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U1BC44 pdf
U1BC44,U1GC44,U1JC44
TOSHIBA RECTIFIER SILICON DIFFUSED JUNCTION TYPE
U1BC44,U1GC44,U1JC44
FOR HYBRID USE
Unit: mm
l Average Forward Current
l Repetitive Peak Reverse Voltage
l Mini Plastic Mold Package
: IF (AV) = 1.0A
: VRRM = 100, 400, 600V
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
Repetitive Peak
Reverse Voltage
U1BC44
U1GC44
U1JC44
VRRM
Average
Forward
Current
On Ceramic Substrate
On Glassepoxy
Substrate
IF (AV)
Peak One Cycle Surge Forward
Current (NonRepetitive)
IFSM
Junction Temperature
Storage Temperature Range
Tj
Tstg
RATING
100
400
600
1.0
(Ta = 75°C)
0.9
(Ta = 25°C)
30 (50Hz)
33 (60Hz)
40~150
40~150
UNIT
V
A
A
°C
°C
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
JEDEC
JEITA
TOSHIBA
Weight: 0.06g
34D1A
CHARACTERISTIC
Peak Forward Voltage
Repetitive Peak Reverse
Current
Thermal Resistance
SYMBOL
TEST CONDITION
VFM
IFM = 1.0A
IRRM
VRRM = Rated
Rth (ja)
On ceramic substrate
DC
On glass-epoxy substrate
MIN TYP. MAX UNIT
― ― 1.2 V
― ― 10 µA
― ― 60
°C / W
― ― 120
STANDARD SOLDERING PAD
1 2001-07-18
Toshiba Semiconductor
Toshiba Semiconductor



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