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U1898 Datasheet

N-Channel Switch

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U1898
N-Channel Switch
• This device is designed for low level analog switching, sample and
hold circuits and chopper stabalized amplifiers.
• Sourced from Process 51.
• See J111 for characteristics.
1 TO-92
1. Drain 2. Source 3. Gate
Absolute Maximum Ratings* Ta=25°C unless otherwise noted
Symbol
Parameter
VDG Drain-Gate Voltage
VGS Gate-Source Voltage
IGF Forward Gate Current
TJ, TSTG
Operating and Storage Junction Temperature Range
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Ratings
40
-40
50
-55 ~ 150
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
mA
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V(BR)GS
Gate-Source Breakdown Voltage
VGS(off)
Gate-Source Cutoff Voltage
IDGO
Drain-Gate Leakage Current
On Characteristics
IG = 1.0 µA, VDS = 0
VDS = 20 V, ID = 1.0 nA
VDG = 20 V, IS = 0
IDSS
Zero-Gate Voltage Drain Current *
rDS(on)
Small Signal Characteristics
VDS = 20 V, VGS = 0
ID = 1.0 mA, VGS = 0
rds(on)
Drain-Source On Resistance
Ciss Input Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
VDS = VGS = 0, f= 1.0 kHz
VDS = 20, VGS = 0, f = 1.0 MHz
VGS = - 20 V, f = 1.0 MHz
ton Turn-On Time
toff Turn-Off Time
* Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
ID(on) = 6.0 mA
VGS(off) = 6.0 V
Min.
-40
-2.0
15
Max.
-7.0
-200
50
50
16
5.0
35
60
Units
V
V
pA
mA
pF
pF
ns
ns
Thermal Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
PD Total Device Dissipation
Derate above 25°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
625
5.0
125
357
Units
mW
mW/°C
°C/W
°C/W
©2004 Fairchild Semiconductor Corporation
Rev. A, April 2004
Fairchild Semiconductor
Fairchild Semiconductor



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