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U16C20D Datasheet

(U16C05 - U16C60) 16.0 Ampere Glass Passivated Junction Ultrafast Recovery Rectifiers

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U16C20D pdf
U16C05 thru U16C60
®
U16C05 thru U16C60
Pb Free Plating Product
Pb
16.0 Ampere Glass Passivated Junction Ultrafast Recovery Rectifiers
Features
Fast switching for high efficiency
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
Automotive Environment|DC Motor Control
Plating Power Supply|UPS
Amplifier and Sound Device System etc..
Mechanical Data
Case: Molded plastic TO-220AB Heatsink
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity:Color band denotes cathode
Mounting position: Any
Weight: 2.03 grams
TO-220AB
.419(10.66)
.387(9.85)
.139(3.55)
MIN
Unit : inch (mm)
.196(5.00)
.163(4.16)
.054(1.39)
.045(1.15)
.038(0.96)
.019(0.50)
.1(2.54)
.1(2.54)
Positive
Suffix "C"
Negative
Suffix "A"
Doubler/Series Connection
Suffix "D"
.025(0.65)MAX
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Common Cathode Suffix "C"
Common Anode Suffix "A"
Anode and Cathode Coexistence Suffix "D"
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
U16C05C
SYMBOL U16C05A
U16C05D
VRRM
50
VRMS
35
U16C10C
U16C10A
U16C10D
U16C20C
U16C20A
U16C20D
100 200
70 140
U16C30C
U16C30A
U16C30D
300
210
U16C40C
U16C40A
U16C40D
400
280
U16C60C
U16C60A UNIT
U16C60D
600 V
420 V
Maximum DC Blocking Voltage
VDC 50 100 200 300 400 600 V
Maximum Average Forward Rectified
Current TC=100oC
IF(AV)
16.0 A
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
IFSM
175
150 A
Maximum Instantaneous Forward Voltage
@ 8.0 A
VF
Maximum DC Reverse Current @TJ=25oC
At Rated DC Blocking Voltage @TJ=125oC
IR
Maximum Reverse Recovery Time (Note 1) Trr
Typical junction Capacitance (Note 2)
CJ
Typical Thermal Resistance (Note 3)
R JC
Operating Junction and Storage
Temperature Range
TJ, TSTG
0.98 1.3
10.0
250
35
90
2.2
-55 to + 150
1.7 V
uA
uA
nS
pF
oCW
oC
NOTES : (1) Reverse recovery test conditions IF= 0.5A, IR= 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
Page 1/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
Free Datasheet http://www.datasheet4u.com/
Thinki Semiconductor
Thinki Semiconductor



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