131,072 WORD x 8 BIT SYNCHRONOUS STATIC RAM
with Input Registers, Output Registers and Pass-Through Feature
The TC55BS8128J is a 1,048,576 bit synchronous static random access memory fabricated using BiCMOS technology and
organized as 131,072 words by 8 bits. The TC55BS8128J is similar to the TC55BS8125J but has separate data inputs and
outputs and a write-cycle pass-through feature.
Designed for pipelined architectures, this device has internal input and output registers which latch on the positive edge of an
external clock (ClK). All address; data, and control signals are latched. The setup and hold times for the inputs are 2ns and 1ns
respectively. Synchronous SRAMs can lead to faster, more robust system operation by virtually eliminating the timing skew
problems associated with conventional asynchronous SRAMs. For example, write operations are internally self-timed when
initiated - eliminating the need for accurate write pulse generation and timing by the memory controller or microprocessor. A
pass-through feature during write cycles allows the outputs to follow the inputs with a one clock cycle delay. For read cycles, data
is available one clock cycle after the address is latched. All inputs and outputs are TTL compatible.
The TC55BS8128J is available in a 40-pin, 400mil SOJ package suitable for high density assembly.
• Fast cycle time
- TC55BS8128J-10 10ns (max.)
- TC55BS8128J-12 12ns (max.)
• Fast clock access time
- TC55BS8128J-10 5ns (max.)
- TC55BS8128J-12 6ns (max.)
• Input and output registers for synchronous operation
• Data pass-through for write cycles
• Single power supply: 5V±10%
• Separate data inputs and outputs
• Package: JEDEC standard pinout
- 40-pin, 400mil SOJ: SOJ40-P-400
AO - A16
DO - 07
Chip Enable Input
Write Enable Input
Pin Connection (Top View)
TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC.