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TC55B4256J-15 Datasheet

256K x 4-Bit BiCMOS Static RAM

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TC55B4256J-15 pdf
TOSHIBA
TC55B4256]-12/15/20
SILICON GATE BiCMOS
262,144 WORD x 4 BIT BiCMOS STATIC RAM
Description
The TC55B4256J is a 1,048,576 bit high speed BiCMOS static random access memory organized as 262,144 words by 4 bits
and operated from a single 5V supply. Toshiba's BiCMOS technology and advanced circuit design enable high speed operation.
The TC55B4256J features low power dissipation when the device is deselected using chip enable (CE).
The TC55B4256J is suitable for use in applications where high speed is required such as cache memory, high speed storage, and
main memory. All inputs and outputs are TIL compatible.
The TC55B4256J is available in a 400mil width, 28-pin SOJ suitable for high density surface assembly.
Features
• Fast access time
- TC55B4256J-12 12ns (max.)
- TC55B4256J-15 15ns (max.)
- TC55B4256J-20 20ns (max.)
• Low power dissipation
- Operation:
- TC55B4256J-12 130mA (max.)
- TC55B4256J-15 130mA (max.)
- TC55B4256J-20 130mA (max.)
- Standby:
12mA (max.)
• Single 5V power supply: 5V±10%
• Fully static operation
• Inputs and outputs TIL compatible
• Package:
- TC55B4256J
: SOJ28-P-400
Pin Names
AO -A17
1/01 - 1/04
CE
WE
VDD
GND
Address Inputs
Data Inputs/Outputs
Chip Enable Input
Write Enable Input
Power (+5V)
Ground
Pin Connection (Top View)
TCSSB~256J
A3 A4
A2 AS
A1 A6
AO A7
CE A8
1/01 1/04
Veo GND
GND Voo
1/02 1/03
WE A9
A17 A10
A16 A1'
A1S A12
A14 A13
(SOJ)
TOSHIBA AMERICA ELEC'rRONIC COMPONENTS, INC.
8-103
Toshiba
Toshiba



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