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(Datasheet) TC55B329P-10

32K x 9-Bit BiCMOS Static RAM

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TC55B329P-10 pdf
TOSHIBA
1l:55B329P/]-10/12
SILICON GATE BiCMOS
32,768 WORD x 9 BIT BiCMOS STATIC RAM
Description
The TC55B329P/J is a 294,912 bit high speed BiCMOS static random access memory organized as 32,768 words by 9 bits and
operated from a single 5V supply. Toshiba's BiCMOS technology and advanced circuit design enable high speed operation.
The TC55B329P/J features low power dissipation when the device is deselected using chip enable (CE1, CE2) and has an
output enable input (OE) for fast memory access.
The TC55B329P/J is suitable for use in high speed applications such as cache memory and high speed storage. All inputs and
outputs are TTL compatible.
The TC55B329P/J is available in a 300mil width, 32-pin DIP and SOJ suitable for high density surface assembly.
Features
• Fast access time
- TC55B329P/J-10 10ns (max.)
- TC55B329P/J-12 12ns (max.)
• Low power dissipation
- Operation:
- TC55B329P/J-10 170mA (max.)
- TC55B329P/J-12 170mA (max.)
- Standby:
15mA (max.)
• Single 5V power supply: 5V±10%
• Fully static operation
• Inputs and outputs TTL compatible
• Output buffer control: OE
• Package:
- TC55B329P: DIP32-P-300
- TC55B329J: SOJ32-P-300
Pin Names
AO - A14
1/01 - 1/09
CEf,CE2
WE
OE
VDD
GND
NC
Address Inputs
Data Inputs/Outputs
Chip Enable Inputs
Write Enable Input
Output Enable Input
Power (+5V)
Ground
No Connection
Pin Connection (Top View)
TC558329P
NC Voo
NC
A8
A7
A6 A13
AS A9
A4 A10
A3 All
A2 OE
Al Al2
AO CEl
1/01 1/09
1/02 1/08
1/03 1/07
1/04 1/06
GNO 1/05
(DIP)
TC558329J
NC VOO
NC A14
A8 CE2
A7 WE
A6 A13
AS A9
A4 A10
A3 All
A2 OE
Al A12
AO m
·1/01 1109
1/02 1/08
1103 1/07
1104 1/06
GND 1/05
(SOJ)
TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC.
8-87
Toshiba
Toshiba


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