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(Datasheet) TC55B328J-10

32K x 8-Bit BiCMOS Static RAM

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TC55B328J-10 pdf
TOSHIBA
1l:55B328P/]-10/12
SILICON GATE BiCMOS
32,768 WORD x 8 BIT BiCMOS STATIC RAM
Description
The TC55B328P/J is a 262,144 bit high speed BiCMOS static random access memory organized as 32,768 words by 8 bits and
operated from a single 5V supply. Toshiba's BiCMOS technology and advanced circuit design enable high speed operation.
The TC55B328P/J features low power dissipation when the device is deselected using chip enable (GE) and has an output
enable input (OE) for fast memory access.
The TC55B328P/J is suitable for use in high speed applications such as cache memory and high speed storage. All inputs and
outputs are TIL compatible.
The TC55B328P/J is available in a 300mil width, 28-pin DIP and SOJ suitable for high density surface assembly.
Features
• Fast access time
- TC55B328P/J-10 10ns (max.)
- TC55B328P/J-12 12ns (max.)
• Low power dissipation
- Operation:
- TC55B328P/J-10 170mA (max.)
- TC55B328P/J-12 170mA (max.)
- Standby:
15mA (max.)
• Single 5V power supply: 5V±10%
• Fully static operation
• Inputs and outputs TIL compatible
• Output buffer control: OE
• Package:
- TC55B328P: DIP28-P-300B
- TC55B328J: SOJ28-P-300A
Pin Names
AO - A14 Address Inputs
1/01 - 1/08 Data Inputs/Outputs
CE Chip Enable Input
WE Write Enable Input
OE Output Enable Input
VDD
GND
Power (+5V)
Ground
Pin Connection (Top View)
TCSSB328P
A14
A12
A7
A6
AS
A4
A3
A2
Al
AO
1/01
1/02
1103
GND
Voo
WE
A13
A8
A9
All
OE
Ala
CE
1/08
1/07
1/06
1/05
1/04
(DIP)
TCssB328J
A14 Voo
A12 We
A7 An
A6 A8
AS A9
A4 All
A3 DE
A2 Ala
Al a
AO 1/08
1/01 1/07
1/02
1/06
1/03 1/05
GND
1/04
(SOJ)
TOSH!BA AMERICA ELECTRONIC COMPONENTS. INC.
8-65
Toshiba
Toshiba


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