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TC55329AJ-25 Datasheet

32K x 9-Bit CMOS SRAM

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TC55329AJ-25 pdf
TOSHIBA
1l:55329lU?/AJ-15/20/25/35
SILICON GATE CMOS
32,768 WORD x 9 BIT CMOS STATIC RAM
Description
The TC55329AP/AJ is a 294,912 bit high speed CMOS static random access memory organized as 32,768 words by 9 bits and
operated from a single 5V supply. Toshiba's advanced CMOS technology and circuit design enable high speed operation.
The TC55329AP/AJ features low power dissipation when the device is deselected using chip enable (CE1, CE2) and has an
output enable input (OE) for fast memory access. Also, the device power between memory accesses is reduced by an automatic
power down circuit.
The TC55329AP/AJ is suitable for use in high speed applications such as cache memory and high speed storage. All inputs
and outputs are TIL compatible.
The TC55329AP/AJ is available in a 300mil width, 32-pin DIP and SOJ suitable for high density surface assembly.
Features
• Fast access time
- TC55329APIAJ-15
- TC55329AP/AJ-20
- TC55329AP/AJ-25
- TC55329AP/AJ-35
15ns (max.)
20ns (max.)
25ns (max.)
35ns (max.)
• Low power dissipation
- Operation:
- TC55329AP/AJ-15 140mA (max.)
- TC55329AP/AJ-20 140mA (max.)
- TC55329AP/AJ-25 140mA (max.)
- TC55329AP/AJ-35 120mA (max.)
- Standby:
1mA (max.)
• Single 5V power supply: 5V±10%
• Fully static operation
• Inputs and outputs TIL compatible
• Output buffer control: OE
• Package:
- TC55329AP: DIP32-P-300
- TC55329AJ: SOJ32-P-300
Pin Names
AD -A14
1/01 - 1/09
CE1, CE2
WE
OE
VDD
GND
NC
Address Inputs
Data Inputs/Outputs
Chip Enable Inputs
Write Enable Input
Output Enable Input
Power (+5V)
Ground
No Connection
Pin Connection (Top View)
TC55329AP
NC Voo
NC A14
AS CE2
A7 WE
A6 A13
AS A9
A4 A10
A3 All
A2 at
Al
AO
eA1n2
1/01 1/09
1/02 1/08
1/03 1/07
1/04 1/06
GND 1/05
(DIP)
TC55329AJ
NC
NC
AS
A7
A6
AS
A4
A3
A2
Al
AO
1/01
1/02
1/03
1/04
GND
Voo
A14
CE2
WE
A13
A9
A10
All
OE
A12
m
1109
1/08
1/07
1/06
1/05
(SOJ)
TDSHIBA AMERICA ELECTRONIC COMPONENTS. INC.
8-79
Toshiba
Toshiba



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